| PART |
Description |
Maker |
| KM23C4100D KM23C4100DG SAMSUNGSEMICONDUCTORCO.LTD. |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位12Kx8 / 256Kx16）的CMOS掩模ROM分位12Kx8 / 256Kx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| EDI88512CA_LPA-B32 EDI88512CA_LPA-C EDI88512CA_LPA |
20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
512Kx8 Monolithic SRAM SMD 5962-95600
512Kx8 Monolithic SRAM, SMD 5962-95600
SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器
12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器
55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
|
White Electronic Designs
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| HM62V16256BLTT-8SL HM62V16256BLTT-8 HM62V16256BLTT |
4 M SRAM (256-kword ×16-bit)(4 M 静态RAM(256k字6) 四米的SRAM56 - KWord的16位）个M静态随机存储器56k字16位）
From old datasheet system
SRAM,256KX16,CMOS,TSOP,44PIN,PLASTIC
|
Hitachi,Ltd.
Hitachi America
|
| TC55V16256FTI-15 TC55V16256FTI-12 |
SRAM,256KX16,CMOS,TSOP,44PIN,PLASTIC
From old datasheet system
|
Toshiba.
|
| N04L163WC1A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| ACT-PS512K8 ACT-9S512K8N-010L2I ACT-9S512K8N-010L2 |
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM
16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I2C Serial Interface 6-SOT-23
512K X 8 CACHE SRAM, 17 ns, PDSO36 0.930 X 0.405 INCH, 0.148 INCH HEIGHT, PLASTIC, SOJ-36
512K X 8 CACHE SRAM, 25 ns, PDSO36 0.930 X 0.405 INCH, 0.148 INCH HEIGHT, PLASTIC, SOJ-36
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM 行为PS512K8高兆位单片SRAM的塑
512K X 8 CACHE SRAM, 15 ns, PDSO36
512K X 8 CACHE SRAM, 20 ns, PDSO36
|
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
Aeroflex Circuit Techno...
|
| IDT7052S25PQF |
SMD-IC,MEM,SRAM,2KX8 25NS,4PORT,PAR,PQFP 2K X 8 FOUR-PORT SRAM, 25 ns, PQFP132
|
Integrated Device Technology, Inc.
|
| EDI88512C_LP-C EDI88512C_LP-N EDI88512C/LP-N EDI88 |
100ns; 5V power supply; 512K x 8 monolithic SRAM CMOS
SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
|
White Electronic Designs
|
| WMS128K8-17FEM WMS128K8-17FM WMS128K8-55CLC WMS128 |
55ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
17ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
15ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
x8 SRAM x8的SRAM
25ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
|
White Electronic Designs
Microchip Technology, Inc.
Sharp, Corp.
Electronic Theatre Controls, Inc.
Raltron Electronics, Corp.
|
